The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[15p-K301-1~12]17.3 Layered materials

Sat. Mar 15, 2025 3:45 PM - 7:00 PM JST
Sat. Mar 15, 2025 6:45 AM - 10:00 AM UTC
K301 (Lecture Hall Bldg.)
Nobuyuki Aoki(千葉大)
PR
SonySemiconductor
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Highlighted Presentation

[15p-K301-1]On-chip Terahertz Spectroscopy of Graphene FET

〇Katsumasa Yoshioka1, Raphael Mol1, Taro Wakamura1, Masayuki Hashisaka2, Kenji Watanabe3, Takashi Taniguchi3, Norio Kumada1 (1.NTT Basic Res. Labs., 2.The Univ. of Tokyo, 3.NIMS)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-K301-2]Temperature Dependent Ultrafast Edge Photocurrent and Carrier Dynamics in WTe2 With On-chip THz Spectroscopy

〇(P)Subhashri Chatterjee1, Katsumasa Yoshioka1, Taro Wakamura1, Norio Kumada1 (1.NTT BRL, NTT Corp.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-K301-3]Gate length dependence of high frequency characteristics in TMDC semiconductor transistors

〇Akiko Ueda1, Hiroshi Imamura1, Hirokazu Fukidome2 (1.AIST, 2.RIEC, Tohoku Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-K301-4]Charge-Injection Barrier Switching of MoS2 Field-Effect Transistors by Water-Confining Molecular Deposition Layers

Hiroki Kii1, 〇Ryo Nouchi1,2 (1.Osaka Pref. Univ., 2.Osaka Metro. Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K301-5]Improvement of the device performance of hBN-based magnetic tunnel junctions via crystallization of a ferromagnetic electrode

〇Shunsuke Masuda1, Satoru Emoto1, Satoru Fukamachi1, Takashi Kimura2,3, Hiroki Ago1,2 (1.Kyushu Univ., 2.Kyushu Univ. Semicon., 3.Kyushu Univ. Sci.)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-K301-6]Electrode dependence of TFT characteristics of Molybdenum sulfide thin-film transistors

〇Masamichi Tsuchida1, Li Kecheng1, Xu Chenghao1, Kousaku Shimizu1 (1.Nihon Univ.)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K301-7]Ni-Containing Two-Dimensional Layered Metal as a Source/Drain Contact Material

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL)
Comment()
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[15p-K301-8]Characterization of thermal stability of Te-based contact electrical properties for TMDC MOSFETs

〇WENHSIN CHANG1, S. HATAYAMA1, Y. SAITO1,2, N. OKADA1, T. ENDO3, Y. MIYATA3, T. IRISAWA1 (1.SFRC, AIST, 2.Tohoku Univ., 3.Tokyo Metro. Univ.)
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K301-9]Device characterization of ultra small MoS2 single grain grown by MOCVD

〇KEISUKE ATSUMI1, LI SHUHONG1, NISHIMURA TOMONORI1, KANAHASHI KAITO1, SAKUMA YOSHIKI2, NAGASHIO KOSUKE1 (1.Tokyo univ., 2.NIMS)
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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[15p-K301-10]In-plane tunneling FET operation using Nb-doped WSe2

〇Kaito Kanahashi1, Tomonori Nishimura1, Satoru Morito2, Keiji Ueno2, Kosuke Nagashio1 (1.U. Tokyo, 2.Saitama Univ.)
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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[15p-K301-11]Stability and contact resistance of degenerately doped monolayer MoS2 using an amine based molecule

〇Takashi Kobayashi1, Daisuke Kiriya1 (1.Univ. of Tokyo)
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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[15p-K301-12]Development of Planar Electron Emission Devices with Graphene/BN/Si Stacked Structure Using BN Direct Deposition Technique

〇Katsuhisa Murakami1, Hiromasa Murata1, Masayoshi Nagao1 (1.AIST)
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