Presentation Information
[15p-K301-5]Improvement of the device performance of hBN-based magnetic tunnel junctions via crystallization of a ferromagnetic electrode
〇Shunsuke Masuda1, Satoru Emoto1, Satoru Fukamachi1, Takashi Kimura2,3, Hiroki Ago1,2 (1.Kyushu Univ., 2.Kyushu Univ. Semicon., 3.Kyushu Univ. Sci.)
Keywords:
hexagonal boron nitride,magnetic tunnel junction,tunnelling magnetoresistance
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