[15p-K303-1~7] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Highlighted Presentation

[15p-K303-3] Atomic layer thickness control of epitaxial Co/Pt(111) superlattice perpendicular magnetic films by sputtering

Jieyuan Song¹, Thomas Scheike¹, Cong He¹, Zhenchao Wen¹, Tadakatsu Ohkubo¹, Kwangseok Kim², 〇Hiroaki Sukegawa¹, Seiji Mitan¹ (1.NIMS, 2.SAIT)

Keywords:

perpendicular magnetization,superlattices

Perpendicular magnetic tunnel junctions (p-MTJs) with strong perpendicular magnetic anisotropy (PMA) play a considerable role as memory cells of magnetoresistive random access memories (MRAMs) due to their scalability (< 10 nm phi). A recent theoretical study predicted that fully fcc(111) oriented MTJs consisting of Co-based PMA alloys, such as CoPt(111), provide a giant tunnel magnetoresistance (TMR) over 2000% with a large bulk PMA energy. Co/Pt(111) superlattices can be a good candidate for (111)-based p-MTJs due to the large PMA energy at a relatively low temperature treatment (~300 °C), especially for an L11 metastable phase. Nevertheless, the sputter growth mechanism of Co/Pt superlattices remains unclear. In this study, we developed atomically controlled epitaxial Co/Pt superlattices down to a monolayer (ML) scale using sputtering to explore future (111)-based p-MTJ applications.