講演情報
[15p-K303-3]エピタキシャルCo/Pt(111)超格子垂直磁化膜の原子層厚のスパッタ制御
Song Jieyuan1、Scheike Thomas1、He Cong1、Wen Zhenchao1、大久保 忠勝1、Kim Kwangseok2、〇介川 裕章1、三谷 誠司1 (1.NIMS、2.SAIT)
キーワード：
垂直磁化膜、超格子
Perpendicular magnetic tunnel junctions (p-MTJs) with strong perpendicular magnetic anisotropy (PMA) play a considerable role as memory cells of magnetoresistive random access memories (MRAMs) due to their scalability (< 10 nm phi). A recent theoretical study predicted that fully fcc(111) oriented MTJs consisting of Co-based PMA alloys, such as CoPt(111), provide a giant tunnel magnetoresistance (TMR) over 2000% with a large bulk PMA energy. Co/Pt(111) superlattices can be a good candidate for (111)-based p-MTJs due to the large PMA energy at a relatively low temperature treatment (~300 °C), especially for an L11 metastable phase. Nevertheless, the sputter growth mechanism of Co/Pt superlattices remains unclear. In this study, we developed atomically controlled epitaxial Co/Pt superlattices down to a monolayer (ML) scale using sputtering to explore future (111)-based p-MTJ applications.