[15p-K307-1~14] 9.4 Thermoelectric conversion

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-K307-1] Epitaxial growth of Mg₃Bi₂ thin films on c-Al₂O₃ substrates and evaluation of thermoelectric properties

〇(D)Akito Ayukawa¹, Takeru Kuriyama¹, Koki Nejo¹, Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ.)

Keywords:

Thermoelectric materials,Mg3Bi2,Epitaxial growth

Mg₃Bi₂-based materials that exhibit high thermoelectric performance, especially due to their low thermal conductivity, are attracting attention toward thin-film thermoelectric materials that can be used at room temperature. However, there are few reports of epitaxial thin films of Mg₃Bi₂ due to its atmospheric instability, and the challenge is to provide atmospheric stability for accurate structural analysis and characterization of physical properties. The objective of this study is the epitaxial growth of Mg₃Bi₂ by molecular beam epitaxy and the evaluation of its thermoelectric properties for high-performance thermoelectric material applications.