[15p-K307-1~14] 9.4 Thermoelectric conversion

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-K307-2] Study of ion implantation method for impurity doping into Mg₃Sb₂ thin films

〇Shunya Sakane¹, Akito Ayukawa¹, Nozomu Kiridoshi¹, Takeru Kuriyama¹, Koki Nejo¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg3Sb2,Zintl compounds,Epitaxial growth

We have epitaxially grown Mg₃Sb₂ on sapphire substrates by molecular beam epitaxy (MBE) and evaluated its thermoelectric properties. It was found that this thin film exhibits high mobility and yields a higher power factor than previously reported Mg₃Sb₂ thin films. In this study, we aim to establish an impurity doping method using ion implantation to optimize the thermoelectric properties in Mg₃Sb₂ thin films. We will present our discussion on thermoelectric properties after ion implantation.