[15p-K307-1~14] 9.4 Thermoelectric conversion

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[15p-K307-8] Correction of thin-film-based thermoelectric device characteristics using the effective temperature difference

〇Isao Ohkubo¹, Masayuki Murata², Akihiko Ohi¹, Mariana S. L. Lima³, Takeaki Sakurai³, Takashi Aizawa¹, Takao Mori¹ (1.NIMS, 2.AIST, 3.Univ. of Tsukuba)

Keywords:

Thermoelectric devices,Thin films

Miniaturized in-plane π-type thermoelectric devices based on an epitaxial thin film of the II-IV compound thermoelectric semiconductor Mg₂Sn_0.8Ge_0.2 were developed utilizing the microfabrication techniques of photolithography and dry etching. Our thermoelectric devices contain many π junctions. The electrical and thermal contacts at each π junction are not uniform, making it difficult to compare device characteristics among devices. Therefore, in this study, we attempted to develop a correction method for thermoelectric device characteristics that considers the effective temperature difference.