Presentation Information

[15p-K401-4]Analysis of in-gap states in polarization-doped p- type AlxGa1-xN layers on AlN

〇(M1)Shunsuke Obata1, Teppei Takehisa1, Takeshi Suzuki2, Daichi Imai1,2, Tetuya Takeuchi1,2, Takao Miyajima1,2 (1.Grad Sch.Sci. Tech., Meijo Univ., 2.Meijo Univ.)

Keywords:

Polarization doping,Photothmal deflection spectroscopy,AlGaN


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