Session Details

[15p-K401-1~15]15.4 III-V-group nitride crystals

Sat. Mar 15, 2025 1:00 PM - 5:30 PM JST
Sat. Mar 15, 2025 4:00 AM - 8:30 AM UTC
K401 (Lecture Hall Bldg.)
Yoshio Honda(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.), Kohei SHIMA(Tohoku Univ.), Kazuyoshi Iida(Nagoya Univ.)

[15p-K401-2]Effect of growth temperature on AlGaN-based UV-B laser diodes and characterization of emission properties

〇(M1)Shundai Maruyama1, Ryoya Yamada1, Yoshinori Imoto1, Takumu Saito1, Rintaro Miyake1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Hideto MIyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo University, 2.Mie University)
Comment()

[15p-K401-3]AlGaN UV-B refractive index waveguide laser diodes: Optical characteristics and etching effects

〇(M1)Rintaro Miyake1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Shundai Maruyama1, Shogo Karino1, Yusuke Sasaki1, Ryota Watanabe1, Yuma Miyamoto1, Naoki Kitta1, Seiya Kato1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ.)
Comment()

[15p-K401-4]Analysis of in-gap states in polarization-doped p- type AlxGa1-xN layers on AlN

〇(M1)Shunsuke Obata1, Teppei Takehisa1, Takeshi Suzuki2, Daichi Imai1,2, Tetuya Takeuchi1,2, Takao Miyajima1,2 (1.Grad Sch.Sci. Tech., Meijo Univ., 2.Meijo Univ.)
Comment()

[15p-K401-5][The 57th Young Scientist Presentation Award Speech] Device performance with sharp heterojunction interface applied in AlGaN-based UV-B LDs

〇Takumu Saito1, Rintaro Miyake1, Ryoya Yamada1, Yoshinori Imoto1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
Comment()

[15p-K401-6]The effect of the Al composition gradient layer at the interface between the electron blocking layer and the guide layer on the carrier injection efficiency in AlGaN-based UV-B laser diodes

〇(M1)Takumu Saito1, Rintaro Miyake1, Ryoya Yamada1, Yoshinori Imoto1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
Comment()

[15p-K401-7]Effects and characterization of low-temperature annealing of n-electrodes in AlGaN-based UV-B LDs

〇(B)Ryota Watanabe1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Shundai Maruyama1, Rintaro Miyake1, Shogo Karino1, Yusuke Sasaki1, Sho Iwayama1, Hideto Miyake2, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
Comment()

[15p-K401-8]Temperature dependence of polarization degree in AlGaN-based MQWs with emission wavelengths of around 220-230 nm

Kaichi Tani1, Shunsuke Ochiai1, Yuhi Muragaki1, 〇Hideaki Murotani2, Satoshi Kurai1, Narihito Okada1, Muhammad Ajmal Khan3, Mitsuhiro Muta4, Yasushi Iwaisako4, Hideki Hirayama3, Yoichi Yamada1 (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN, 4.Nippon Tungsten Co., Ltd.)
Comment()

[15p-K401-9]Selection of substrate for vertical UV-B laser diode and optimization of process steps

〇(M1)YUSUKE SASAKI1, Yoshinori Imoto1, Ryoya Yamada1, Takumu Saito1, Rintaro Miyake1, Shundai Maruyama1, Shogo Karino1, Sho Iwayama1, Motoaki Iwaya1, Tetuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ.)
Comment()

[15p-K401-10]Polarization-Field-Induced SHG Device with AlGaN/AlN Strained-Layer Superlattice

〇Tomoyuki Tanikawa1,2, Shahzeb Malik1,2, Kanako Shojiki3, Masaaki Ito1,2, Ryo Momosaki1,2, Hiroto Honda1,2, Hideto Miyake4, Masahiro Uemukai1,2, Ryuji Katayama1,2 (1.Osaka Univ., 2.OTRI Spin, Osaka Univ., 3.Kyoto Univ., 4.Mie Univ.)
Comment()

[15p-K401-11]Improving the luminous efficiency of 226 nm far-UVC LEDs with a double heterostructure as the light-emitting layer

〇Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Shuhei Ichikawa4,5, Kazunobu Kojima4, Masahiko Tsuchiya6, Hideto Miyake1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP, 4.Osaka Univ. Grad. Sch. of Eng., 5.Osaka Univ. UHVEM, 6.Stanley Electric Co.)
Comment()

[15p-K401-12]Design and fabrication of Far-UVC LEDs based on ultrathin GaN quantum wells

〇Atsuhisa Izumi1, Kanako Shojiki1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)
Comment()

[15p-K401-13]Optics-free Gbps solar-blind communications by using highly-collimated deep-ultraviolet micro-LED with Fresnel zone plate nano-structures

〇LINGJIE WEI1, Guo-Dong Hao1, Manabu Taniguchi1, Shin-ichiro Inoue1 (1.NICT)
Comment()

[15p-K401-14]AlGaN-Based Deep-Ultraviolet LEDs Achieving 9.1% Wall-Plug Efficiency by Enhanced Light Extraction Efficiency

〇Guodong Hao1, Manabu Taniguchi1, Shin-ichiro Inoue1 (1.NICT)
Comment()

[15p-K401-15]Efficiency Analysis of 230 nm far-UVC LED either grown on Bulk AlN or c-Sapphire as a Function of Quantum-well Numbers

〇(P)Muhammad Nawaz Sharif1, Kohei Fujimoto1,3, Yuya Nagata1,3, Hiromitsu Sakai2, Hiroyuki Yaguchi3, Yukio Kashima4, Muhammad Ajmal Khan1, Hideki Hirayama1 (1.RIKEN, 2.Shin-Etsu Chemical, 3.Saitama University, 4.Marubun Corporation, Chuo, Tokyo)
Comment()