[15p-K503-1~15] 6.1 Ferroelectric thin films

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-K503-12] Development of an in-plane electric field applied device using multiferroic BiFe_0.9Co_0.1O₃ thin films

〇(D)Kei Maeda¹, Koomok Lee¹, Ibuki Matsuura¹, Hajime Nakayama¹, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1.IIR Science Tokyo, 2.KISTEC)

Keywords:

Multiferroic material,Thin film,Ultra-low power consumption devices

BiFe_0.9Co_0.1O₃ (BFCO), which exhibits ferroelectricity and weak ferromagnetism at room temperature, has attracted attention as a solution to the high power consumption of semiconductor memory caused by increasing data traffic. However, conventional device structures utilizing out-of-plane electric fields face challenges such as interference with sensors, hindering practical application. In this study, a novel device structure capable of utilizing in-plane electric fields was fabricated, and its ferroelectric and magnetic properties were evaluated.