[15p-K505-1~8] 3.10 Photonic structures and phenomena

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-K505-6] Improvement of Beam Quality of GaN-based PCSEL by Introducing Refractive Index Compensation Structure

〇Tomoki Masuyama^1,2, Tomoaki Koizumi^1,2, Masahiro Jutori², Kei Emoto^1,2, Atsushi Kitamura², Menaka De Zoysa², Kenji Ogawa², Takuya Inoue², Kenji Ishizaki², Masahiro Yoshida², Susumu Noda² (1.Stanley Electric Co., Ltd, 2.Kyoto Univ.)

Keywords:

Photonic Crystal Surface Emitting Laser

We have been developing blue PCSELs using GaN-based semiconductors. Recently, we have been investigating the possibility of expanding the area (≥500 µmΦ) of these devices while spreading the light in the plane by reducing the distance between the centers of gravity of the holes to ~λ/4. In such a device, unintended oscillation may be induced due to the refractive index difference between the inside and outside of the resonator caused by the carrier plasma effect, especially at high injection. Therefore, we have tried to improve the beam quality by compensating the refractive index to suppress the edge effect.