[15p-K507-1~8] 7.2 Applications and technologies of electron beams

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-K507-6] Field Emission Characteristics of Hafnium Nitride Field Emitter Arrays Fabricated with an Aid of Dry Etching for Removal of Insulating Layer on Emitter Tip

〇Tomoaki Osumi^1,2, Hiromasa Murata², Masayoshi Nagao², Yasuhito Gotoh¹ (1.Kyoto Univ., 2.AIST)

Keywords:

hafnium nitride,field emitter arrays,dry etching

Hafnium nitride (HfN) field emitter arrays (FEA) were prototyped by removing the insulating layer on emitter tips using dry etching. The tips of HfN-FEA were observed by scanning electron microscope. The observation suggested that the HfN on the emitter tips was not lost. It was found that HfN-FEA emitted electrons by applying voltage. It was considered that etching insulating layers as much as possible is necessary to operate HfN-FEA continuously until the emission current stabilizes.