Presentation Information
[15p-P05-45]Electronic states of atomic-layer WTe2 studied by micro-ARPES
〇Katsuaki Sugawara1,2,3, Ryuichi Ando1, Tappei Kawakami1, Koki Yanagizawa1, Ken Yaegashi1, Takashi Takahashi1, Takafumi Sato1,2,4,5,6 (1.Dept. Phys., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.JST-PRESTO, 4.CSIS, Tohoku Univ., 5.SRIS, Tohoku Univ., 6.MathCSS, Tohoku Univ.)
Keywords:
atomic-layer TMD,electronic state,ARPES
Bulk transition-metal dichalcogenide WTe2 is well known to have two kinds of stable crystal-structure Td and 2H structures, and the electronic properties strongly depend on these structures. On the other hand, the electronic properties of a monolayer (atomic-layer) WTe2 are not well understood yet. In this study, we have succeeded in observing the electronic states of atomic-layer WTe2 thin films depending on the crystal structure by precisely tunning the sample growth conditions using MBE. In this talk, we will discuss the crystal structure-dependent electronic states of atomiclayer WTe2.
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