Session Details
[15p-P05-1~62]17 Nanocarbon and Two-Dimensional Materials (Poster)
Sat. Mar 15, 2025 1:30 PM - 3:30 PM JST
Sat. Mar 15, 2025 4:30 AM - 6:30 AM UTC
Sat. Mar 15, 2025 4:30 AM - 6:30 AM UTC
P05 (Gymnasium)
[15p-P05-1]Analysis of the generation rate of plastic pyrolysis gas for CNT growth
〇Azusa Murakami1, Kotaro Takanashi1, Yusuke Kurihara1, Takashi Ikuno1 (1.Tokyo Univ. of Sci.)
[15p-P05-2]Statistical analysis and fluid simulation of carbon nanotube random network formation on nanopillar arrays via the kite growth mechanism
〇Yuanjia Liu1, Taiki Inoue1, Yoshihiro Kobayashi1 (1.Osaka Univ.)
[15p-P05-3]Single Molecule Observation of Electronic States of C60 Adsorbed on Au(110)
〇Wataru Hamada1, Mitsuto Wada1, Naoya Saeki1, Satoshi Katano1 (1.Toyo Univ.)
[15p-P05-4]Chirality-Controlled Growth of Single-Walled Carbon Nanotubes Using Nanorings
〇Rikizo Hatakeyama1, Hiroshi Ueno2,3, Eunsang Kwon3, Fuminori Misaizu3 (1.Tohoku Univ. NICHC, 2.Tohoku Univ. FRIIS, 3.Tohoku Univ. GSS)
[15p-P05-5]Conductivity of carbon nanohorn thin films
〇Satoshi Onodera1, Hiroyuki Yamaguchi1, Koji Kotani1, Yasunori Chonan1, Takao Komiyama1, Yuichi Momoi2 (1.Akita Prefectural Univ., 2.Toyo)
[15p-P05-6]Preparation of fullerene/single-walled carbon nanotube composite films and evaluation of their electrocatalytic activities
〇(BC)Kosuke Fujikura1, Nene Kosaku1, Hironori Ogata1,2 (1.Dept. Chem. Sci. and Technol., Hosei Univ., 2.Res.Cent.Micro-Nano, Hosei Univ.)
[15p-P05-7]Effect of MWNT contents on synaptic plasticity in MWNT/PDMS composite films for physical reservoir computing
〇(DC)Hiroaki Komatsu1, Hara Kouhei1, Takashi Ikuno1 (1.Tokyo Univ. Science.)
[15p-P05-8]Evaluation of response of new power generating paper based on carbon-nanotube-composite paper to different amounts of dispersant
〇Hiyu Mitsumaki1, Koya Arai2, Takahide Oya1 (1.Grad. School Eng. Sci., Yokohama National Univ, 2.Mitsubishi Materials)
[15p-P05-9]Study on the Improvement of Power Conversion Efficiency of Dye-Sensitized Solar Cell Paper Using CNT Composite Paper with a New Gel Electrolyte
〇Yi Kou1, Oya Takahide1,2 (1.Grad School Eng. Sci.,Yokohama National Univ., 2.IMS,Yokohama National Univ.)
[15p-P05-10]Fabrication process of passivation layers for bolometric CNT infrared detectors
〇Norika Fukuda1, Tomo Tanaka1,2, Noriyuki Tonouchi1,2, Megumi Kanaori1, Ryota Yuge1,2 (1.AIST, 2.NEC)
[15p-P05-11]Infrared spectroscopy and chirality separation of individual single-walled carbon nanotubes using light-induced nanoscale thermocapillary flows.
〇Kai Watanabe1, Shigeo Maruyama1, Keigo Otsuka1 (1.Univ. of Tokyo)
[15p-P05-12]Study on improving conversion efficiency of paper dye-sensitized solar cell using n-type semiconducting carbon-nanotube-composite-paper with H2/Ar annealing treatment
〇Chihiro Shimizu1, Takahide Oya1,2 (1.Yokohama Nat'l Univ., 2.IMS, Yokohama Nat'l Univ.)
[15p-P05-13]Adsorption of Cs ions from aqueous solutions using carbon nanowalls synthesized from solid carbon sources
〇Yukimasa Fukada1, Aoyagi Yumito2, Yokoyama Misaki2, Horibe Yoichi3, kano Jun2, Kaneda Miyu2, Fujii Tatsuo2, Yoshigoe Akitaka1, Kobata Masaaki1, Fukuda Tatsuo1, Yoshii Kenji1, Ikeda Naoshi2 (1.JAEA, 2.Okayama univ., 3.Kyutech)
[15p-P05-14]Computation on work function of multilayer graphene on SiC(0001) using ESM method
〇(M1C)Mahiro Kubo1, Insung Seo1, Hiroyuki Kageshima1 (1.Shimane Univ.)
[15p-P05-15]Characterization of graphene growth on the patterned Cu-Ni alloy thin films
〇Yukihiro Tominari1, Hitoshi Suzuki2, Shukichi Tanaka1 (1.NICT, 2.Hiroshima Univ.)
[15p-P05-16]Fabrication of Multilayer Graphene on Insulator by RF Magnetron Sputtering
〇Hiromasa Murata1, Katsuhisa Murakami1, Masayoshi Nagao1 (1.AIST)
[15p-P05-17]Real-time XRD analysis of GaN remote epitaxy on sapphire substrates covered with directly grown graphene
〇(M2)Takato Oda1, Yuta Fukui1, Takuo Sasaki2, Shota Yokozawa1, Hiroki Hibino1 (1.Kwansei Gakuin Univ., 2.QST)
[15p-P05-18]Development of the automatic detection and analysis for 2D/3D graphene islands based on AI system
〇Ryosuke Takatsuka1, Masayuki Hashimoto2, Ryota Negishi2 (1.Toyo Univ., 2.Toyo Univ. BNC)
[15p-P05-19]Study on Charge trapping Mechanism of fluorographene
-Fluorination of CVD graphene using plasma process and its structure properties-
〇Toshichika Oigawa1, Yoshiharu Kirihara1, Kohei Mashimo1, Hiroshi Nohira1, Ryousuke Ishikawa1, Yuichiro Mitani1 (1.Tokyo City Univ)
[15p-P05-20]A Study on Twist Angle Dependence of Ionic Conductivity in Bilayer Graphene and Bilayer Hexagonal Boron Nitride using First-Principles Calculations
〇Gen Fukuzawa1, Kiyou Shibata2, Teruyasu Mizoguchi2 (1.Grad. Sch. of Eng., UTokyo, 2.IIS, UTokyo)
[15p-P05-21]High-resolution micro-ARPES study of artificial heterostructure devices
〇Koki Yamamoto1, Koki Yanagizawa1, Katsuaki Sugawara1,2,3, Hiroto Ogura2,4, Toshiaki Kato2,4, Kenzi Watanabe5,6, Takashi Taniguchi5,6, Kenichi Ozawa7, Takashi Takahashi1, Takafumi Sato1,2,8,9,10 (1.Grad. Sch. of Sci., Tohoku Univ., 2.WPI-AIMR., Tohoku Univ., 3.JST-PRESTO, 4.Grad. Sch. of Eng., 5.NIMS, 6.NIMS-MANA, 7.KEK-IMSS-PF, 8.CSIS, Tohoku Univ., 9.SRIS, Tohoku Univ., 10.MathCSS, Tohoku Univ.)
[15p-P05-22]Study of synthesis on high crystallization and electrical properties of graphene oxide thin films via carbon supply at high temperature
〇(M2)Tomoaki Yamashita1, Satoshi Kanda1, Tomofumi Ukai2, Shunji Kurosu2, Tatsuro Hanajiri1,2, Toru Maekawa2, Yuta Nishina3, Tomohiro Yamaguchi4, Koji Ishibashi4, Ryota Negishi1,2 (1.Toyo Univ., 2.Bio-nanoelectronics research centre, 3.Okayama Univ., 4.RIKEN)
[15p-P05-23]Twist angle dependence of chemical reactivity of bilayer graphene
〇Maki Matsuda1, Pablo Solis-Fernandez1, Takako Matsunaga1, Susumu Okada2, Hiroki Ago1 (1.Kyushu Univ., 2.Univ. Tsukuba)
[15p-P05-24]Formation of Graphene with Periodic Strain and Periodic Potential Modulation
〇(M2)Sarana Kondo1, Hiroto Suzuki1, Hideo Yoshioka2, Masahiko Hayashi3, Akinobu Kanda1 (1.Univ. Tsukuba, 2.Nara Women's Univ., 3.Akita Univ.)
[15p-P05-25]Fabrication of capacitive flexible pressure sensor using graphene ink
〇Toshiki Nishio1, Hibiki Kisaka1, Yuito Horita1, Sho Kuromatu1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama gakuin Univ.)
[15p-P05-26]CVD Graphene Transfer Method Using Porous Support for Improved Handling
〇Takeshi Watanabe1, Shimpei Miura1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[15p-P05-27]Graphene-Based Film-Type Electrochromic Devices
〇Minori Sakai1, Miki Fukuzawa1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[15p-P05-28]Photovoltaic characteristics of rotationally faulted multilayer Graphene/n-Si Schottky junction device
〇Hojun Im1, Masahiro Teraoka1 (1.Hirosaki Univ.)
[15p-P05-29]Almina film deposition by ALD on graphene for realization of ultra-thin gate metal
〇Yuto Noguchi1, Kensho Matsuda1, Takuya Kojima1, Mengnan Ke1, Shohei Kumagai2, Toshihiro Okamoto2, Nobuyuki Aoki1 (1.Chiba Univ., 2.Science Tokyo Univ.)
[15p-P05-30]Surface-Enhanced Raman Scattering Effect of Reduced graphene oxide films
〇(M1)Ryoma Ono1, Satoshi Kanda1, Naoki Simazaki1, Taiga Tokunaga1, Yuta Nishina3, Ryota Negishi1,2 (1.Toyo Univ., 2.BNC, 3.Okayama Univ.)
[15p-P05-31]Dri-transformation on Si substrate
〇(B)Ayaka Osumi1, Wataru Ohta1, Sigeya Naritsuka1, Takahiro Maruyama1 (1.meijo Univ)
[15p-P05-32]Theoretical study of intrinsic hBN island nucleated during CVD initial growth on Cu(111)
〇(M2)Ryo Imamura1, Insung Seo1, Hiroyuki Kageshima1 (1.Shimane Univ.)
[15p-P05-33]Atomic layer deposition growth of molybdenum disulfide thin films using tetra-coordinated solid molybdenum precursor
〇Kota Nakayama1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
[15p-P05-34]Direct growth of MoS2 thin films at the Au/SiO2 interface
〇Shota Saruta1, Keiji Ueno1, Hon En Lim1 (1.Saitama Univ.)
[15p-P05-35]Area-selective growth of tungsten disulfide thin films in the gap between copper electrodes
〇Ryusei Tobita1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
[15p-P05-36]CVD synthesis of MoS2 using MoO3 line-patterned substrate
〇Mizuki Tanaka1, Atushi Ando2, Shin-ichi Yamamoto1 (1.Ryukoku Univ., 2.AIST)
[15p-P05-37]CVD growth of h-BN using FeNi films deposited on sapphire substrates
〇Takumi Kanai1, Reo Kamigaki1, Eri Hashimoto1, Ryota Okuda2, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ, 2.AGC Inc)
[15p-P05-38]Effect of H2 annealing of sapphire substrates on the orientation of CVD grown MoS2
〇(B)Yuuki Ohara1, Takato Oda1, Hiroki Hibino1 (1.Kangaku Univ.)
[15p-P05-39]CVD synthesis of MoS2 using two-layer linear patterning supply substrate
〇shogo kawaminami1, mizuki tanaka1, atushi ando2, shin-ichi yamamoto1 (1.Ryukoku Univ., 2.AIST)
[15p-P05-40]CVD growth of bulk SnS with a ferroelectric domain structure
〇Nozomi Matsui1, Atsuhiko Mori2, Kazuki Koyama2, Yuki Kato2, Sota Yamamoto2, Jun Ishihara2, Makoto Kohda1,2,3,4,5 (1.Dept. of Mat. Sci. and Eng., Tohoku Univ., 2.Grad. Sch. of Eng., Tohoku Univ., 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.QUARC, QST)
[15p-P05-41]CVD synthesis of MoS2 using circularly patterned MoO3 source thin films
〇Kuu Nakamura1, Mizuki Tanaka1, Atushi Ando2, Shin-ichi Yamamoto1 (1.Ryukoku Univ., 2.AIST)
[15p-P05-42]Direct growth of MoS2 nanoribbons by chemical vapor deposition
〇Yuna Tamura1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
[15p-P05-43]CVD growth of monolayer MoS2 using metal chloride precursor
〇(D)Kaichi Yamamoto1, Satoru Fukamachi1, Hiroki Ago1,2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. CSeDE)
[15p-P05-44]Structural analyses and optical studies of Mo6Te6 nanowires
〇Shintaro Saito1, Itsuki Yamada1, Zheng Liu2, Yusuke Nakanishi3, Yasumitsu Miyata4, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ., 2.AIST, 3.Univ. Tokyo, 4.Tokyo Metropolitan Univ.)
[15p-P05-45]Electronic states of atomic-layer WTe2 studied by micro-ARPES
〇Katsuaki Sugawara1,2,3, Ryuichi Ando1, Tappei Kawakami1, Koki Yanagizawa1, Ken Yaegashi1, Takashi Takahashi1, Takafumi Sato1,2,4,5,6 (1.Dept. Phys., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.JST-PRESTO, 4.CSIS, Tohoku Univ., 5.SRIS, Tohoku Univ., 6.MathCSS, Tohoku Univ.)
[15p-P05-46]Degenerately Doped MoS2 by an Electrosynthesized Alkyl-chain Containing Donor Molecule
〇(D)Huiqin Liu1, Guanting Liu1, Daisuke Kiriya1 (1.Univ. of Tokyo)
[15p-P05-47]Electrical conductivity characteristics evaluation of folded bilayer MoS2
〇Shotaro Yotsuya1, Takahiko Endo2, Yasumitsu Miyata2, Daisuke Kiriya1 (1.Univ. Tokyo, 2.Tokyo Metro. Univ.)
[15p-P05-48]Growth and electrical conductivity evaluation of impurity-doped MoS2 bulk single crystals
〇Satoru Morito1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
[15p-P05-49]Strain effect detected by Raman peak shifts in bulk layered semiconductor SnS
〇Kazuki Koyama1, Atsuhiko Mori1, Jun Ishihara1, Sota Yamamoto1, Soungmin Bae1, Yu Kumagai1, Makoto Kohda1,2,3,4 (1.Grad. Sch. of Eng., Tohoku Univ., 2.CSIS, Tohoku Univ., 3.DEFS, Tohoku Univ., 4.QUARC, QST)
[15p-P05-50]Polarized Raman spectroscopy analysis of the excitonic insulator Ta2NiSe5
〇Masako Suzuki1, Sarah Harmer2, Sara Miller2, Yoshiaki Kobayashi3, Yukinori Ohta4 (1.Gunma Univ., 2.Flinders Univ., 3.Nagoya Univ., 4.Chiba Univ.)
[15p-P05-51]Shock-induced structural phase transition in oxide materials probed by time-resolved X-ray diffraction
〇Hiroaki Kishimura1, Akihisa Aimi1 (1.NDA)
[15p-P05-52]Absorption wavelength shift induced by structural anisotropy in hybrid black phosphorous-plasmonic nanogratings systems
〇Manabu Iwakawa1, Shoichiro Fukushima1, Masaaki Shimatani1, Shinpei Ogawa1 (1.MitsubishiElectric)
[15p-P05-53]Photo-switching operation of MoS2 field effect transistor by photoisomerization in solution
〇(M1)Kazuki Kurosawa1, Tsuyoshi Takaoka2, Tadahiro Komeda2 (1.Sci, Tohoku Univ., 2.IMRAM, Tohoku Univ.)
[15p-P05-54]Dependence of Photocurrent of MoS2-FET on the amount of the deposited CuNPc
〇(M1)Gaku Kosuge1, Tsuyoshi Takaoka2, Liu Haotin1, Atsushi Ando3, Tadahiro Komeda2 (1.Sci, Tohoku Univ, 2.IMRAM, Tohoku Univ, 3.AIST)
[15p-P05-55]Methane Acitivation by Hot Carriers Generated in Nanosheet-Based Tunnel Junctions
〇(M1)Riku Konishi1, Ryo Nouchi1 (1.Osaka Metro. Univ.)
[15p-P05-56]ReRAM characteristics of WSe2/WOx heterostructures
〇(M1)Shuhei Fukushima1, Che-Yi Lin2, Mitsuru Inada1, Keiji Ueno3, Yen-Fu Lin2, Mahito Yamamoto1 (1.Kansai Univ., 2.NCHU, 3.Saitama Univ.)
[15p-P05-57]Fabrication of in-plane homojunctions based on black phosphorus
with different thicknesses by the O3 treatment
〇(B)Shohei Nagata1, Taichi Oda1, Mitsuru Inada1, Shingo Sato1, Mahito Yamamoto1 (1.Kansai Univ.)
[15p-P05-58]Charge trapping properties of O3-ethced black phosphorus
〇(B)Takeshi Yamamoto1, Taichi Oda1, Mitsuru Inada1, Mahito Yamamoto1 (1.Kansai Univ.)
[15p-P05-59]Control of carrier density in WSe2 by adsorption and desorption of PPh3 molecules
〇(B)Towa Miyabe1, Takumi Shikata1, Mitsuru Inada1, Keiji Ueno2, Mahito Yamamoto1 (1.Kansai Univ., 2.Saitama Univ.)
[15p-P05-60]Tailoring the electronic properties of 2D materials via diversified molecular adlayer
〇Mao Xu1, Chen Li1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
[15p-P05-61]Photocurrent variation in 1L-MoTe2 lateral PN junctions by carrier density modulation
〇Yusuke Hoshi1, Hiroshi Shigeno1, Taku Yoshimura1, Kenji Watanabe2, Takashi Taniguchi2 (1.Tokyo City Univ., 2.NIMS)
[15p-P05-62]Atomic layer deposition via F6-TCNNQ monolayer on WSe2 and dual gate FET operation
〇Kensho Matsuda1, Takuya Kojima1, Yuto Noguchi1, Mengnan Ke1, Shohei Kumagai2, Toshihiro Okamoto2, Nobuyuki Aoki1 (1.Chiba Univ., 2.Science Tokyo Univ.)