[15p-P07-1~60] 10 Spintronics and Magnetics (Poster)

[15p-P07-23] Magnetic Response to Phase Transition in Iron-Based Chalcogenide Fe₃GaTe₂ Thin Films

〇(B)Kosaku Takashima¹, Takahiro Yamazaki¹, Chih-Yu Lee², Alexandre Lira Foggiatto¹, Ichiro Takeuchi², Masato Kotsugi¹ (1.Tokyo Univ. of Sci., 2.Maryland Univ.)

Keywords:

magnetic material,phase-change material

With the advancement of the information society, the development of next-generation electronic devices has become increasingly important, drawing attention to phase-change materials. Notably, Fe₅GeTe₂ and Fe₃GaTe₂ exhibit ferromagnetism and significant perpendicular magnetic anisotropy at room temperature, making them promising candidates for magnetic property changes associated with phase transitions. In this study, Fe₃GaTe₂ thin films were fabricated using the magnetron sputtering method, followed by structural analysis and magnetic property evaluation in both crystalline and amorphous states, aiming to elucidate the mechanisms of magnetic response during phase transitions.