[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-16] Electrochemical Proton Injection into an Epitaxial Thin Films of β-Phase MoO₃ and Characterization of its Structural and Electrical Properties

〇(M1C)Hiroto Tsuruyama¹, Takeru Miyamoto¹, Yuto Kanbayashi¹, Yuichi Hirofuji¹, Nobuya Hiroshiba¹, Kazuto Koike¹ (1.Osaka Inst. of Tech.)

Keywords:

MoO3,MBE,protonation

Hydrogen compounds have recently attracted attention as candidate materials for proton batteries and neuromorphic devices. In this study, we have grown β-MoO₃(100) films on a LSAT substrate by MBE and investigated the changes in structural and electrical properties upon electrochemical proton injection into the films. Injection of protons corresponding to a hydrogen composition x = 0.23 of H_xMoO₃ reduced the resistivity by about five orders of magnitude, and a tendency towards a phase transition from insulator to metal was observed.