Session Details
[15p-P12-1~40]21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)
Sat. Mar 15, 2025 4:00 PM - 6:00 PM JST
Sat. Mar 15, 2025 7:00 AM - 9:00 AM UTC
Sat. Mar 15, 2025 7:00 AM - 9:00 AM UTC
P12 (Gymnasium)
[15p-P12-1]Production of Ga2O3/Cu2O films by sputtering with powder targets
〇(M1)Tsuyoshi Torii1, Sho Tanaka1, Yasuji Yamada1, Shuhei Funaki1 (1.Shimane Univ.)
[15p-P12-2]Defect Investigation of β-Ga2O3 Epitaxial Substrates Irradiated with Electron Beam
〇Yoshitaka Nakano1, Joji Ito2 (1.Chubu Univ., 2.SHI-ATEX)
[15p-P12-3]Low-temperature growth of Ga2O3 layers by molecular beam epitaxy
〇Ren Narazaki1, Katsuhiko Saito1, Guo Qixin1, Tooru Tanaka1 (1.Saga Univ.)
[15p-P12-4]Analysis of Crystal Defects Corresponding to Arrowhead-type Etch Pits in β-Ga2O3 (001) Epitaxial Wafers
〇Tomomichi Terada1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2, Takeshi Fujitani2, Yukari Ishikawa3, Yongzhao Yao3,4 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech, 3.Japan Fine Ceramics Center, 4.Mie Univ.)
[15p-P12-5]Growth Mechanisms of Mist CVD: Thermal Stability Evaluations of Acetylacetonate Complexes by First Principles Molecular Dynamic Calculations
〇Kazuyuki Uno1 (1.Wakayama Univ.)
[15p-P12-6]Theoretical investigation of structural stability of Ga2O3 on a-Al2O3(0001) substrate
〇koki Ishida1, Akiyama Toru1, Kawamura Takahiro1 (1.Mie Univ.)
[15p-P12-7]Mist CVD Growth and Crystal Structure Analysis of κ-Ga2O3 on N-polar GaN
〇(B)Misaki Nishikawa1, Shunpei Ichikawa1, Nowa Ito1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.NMRC, Osaka Inst. of Tech.)
[15p-P12-8]Homoepitaxial growth on β-Ga2O3 (010), (001) and (100) substrates by mist-CVD method
〇Kazuaki Akaiwa1, Taketoshi Tomida2, Yongzhao YAO3, Koichi Kakimoto2, Akira Yoshikawa2 (1.Tottori univ., 2.Tohoku univ., 3.Mie univ.)
[15p-P12-9]Preparation of (GaIn)2O3 Alloy Thin Films by Chemical Solution Deposition using Aqueous Precursor Solutions and Their Application as UV Sensors
〇(M1C)Akito Horibe1, Yoshifumi Taniguchi1, Manami Miyazaki1, Iori Yamasaki1, Masatoshi Koyama1, Nobuya Hiroshiba1, Kazuto Koike1 (1.Osaka Inst. of Tech.)
[15p-P12-10]Temperature dependence of β-Ga2O3 Schottky barrier diode during current switching using Raman spectroscopy
〇Wataru Furumoto1, Sho Hasegawa2, Kohei Sasaki2, Toshiyuki Isshiki1, Noriyuki Hasuike1 (1.Kyoto Inst., 2.NCT,Inc.)
[15p-P12-11]NiO thin films growth mechanism using a novel “Electrostatic Spray Deposition (ESD)” method, and property measurement
〇(D)Fysol Ibna1,2, Sugiyama Mutsumi1,3 (1.Department of Electrical Engineering, Tokyo University of Science, 2.CITY University, Faculty of Science & Engineering, Dhaka-1216, Bangladesh, 3.Research Institute, RIST, Tokyo Univ. of Science,)
[15p-P12-12]Experimental Evidence of In-atom Doping in ZnO Nanoparticles by Thermal Diffusion Process
〇(D)Abdul Md Halim1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University)
[15p-P12-13]The Enhancements of Nitrogen-Doing ZnO for Effective p-Type Semiconductor Performance
〇(M1)Abrarul Haque1, Haruki Ohmori1, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane University)
[15p-P12-14]Electrical Characterization of co-doped with Zn and N ZnO Films
〇Haruki Ohmori1, Abrarul Haque1, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane Univ.)
[15p-P12-15]Fabrication and Characterization of Silver(Ag) Thin Films by Mist CVD
〇Kei Mizumotm1, Tatsuki Okada1, Ryosuke Ohashi11, Htet Su1, Abhay Mondal1, Toshiyuki Kawaharamura1,2 (1.Kochi Univ tech, 2.Res. Inst)
[15p-P12-16]Electrochemical Proton Injection into an Epitaxial Thin Films of β-Phase MoO3 and Characterization of its Structural and Electrical Properties
〇(M1C)Hiroto Tsuruyama1, Takeru Miyamoto1, Yuto Kanbayashi1, Yuichi Hirofuji1, Nobuya Hiroshiba1, Kazuto Koike1 (1.Osaka Inst. of Tech.)
[15p-P12-17]Analysis of photocurrent attenuation in ZnGa2O4 thin filmsin response to deep UV irradiation
〇RYUNOSUKE MAEDA1, Reiya Kase1, Yuya Oguma1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)
[15p-P12-18]The effect of UV ozone treatment on pn junctions using Li-doped NiO
〇Yoshiki Matsubayashi1, Taisei Hattori1, Yuna Koide1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
[15p-P12-19]Surface observation of p-type SnO deposited by reductive sputtering using SnO2 target
〇Tubasa Kobayasi1, Kanta Kibishi1, Yoshikazu Shin1, Shinya Aikawa1 (1.Kogakuin Univ.)
[15p-P12-20]Fabrication of Ta-Doped SnO Thin Films for Thin Film Transistor Application
〇Yoshikazu Shin1, Yamadera Shinri1, Takahashi Tsukasa1, Aikawa Shinya1 (1.Kogakuin University)
[15p-P12-21]Fabrication of p-type SnO thin film via a low-temperature solution process and its characterization
〇(M1)BOWEN CAO1, Ryota Kobayashi1, Shinya Aikawa1 (1.Kogakuin Univ.)
[15p-P12-22]Mist CVD of a-TiOx films on Cu(Al) and its application for anode-free LIB devises
〇So Toyoshima1, Tomomasa Sato1,2, Hajime Shirai2,3, Nobuyuki Matsuki1,2, Hirotaka Sone3, Hideki Kurihara4, Komei Yamamoto5, Tomonori Ohno5 (1.Kanagawa Univ., 2.Kanagawa Univ. RIE, 3.Saitama Univ., 4.SAITEC, 5.AMAYA CO.,LTD)
[15p-P12-23]Analysis of Electronic States in Mist CVD AlxTi1-xOy Thin Films for 2D-Layered Optoelectronics: Impact of Compositions and Post-treatments
〇(PC)Abdul A Kuddus1, Abdurashid Mavlonov1, Keiji Ueno2, Kazi Sajedur Rahman3, Takashi Minemoto1, Hajime Shirai2, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Saitama Univ., 3.Univ. Kebangsaan)
[15p-P12-24]Effect of the Sn/Ge ratio on the synthesis of free-standing rutile-type Sn1−xGexO2 single crystal thin films by chemical lift-off
〇(M2)Tomohito Obata1, Yo Nagashima2, Daichi Oka1, Yasushi Hirose1 (1.Tokyo Metropolitan Univ., 2.Univ. of Tokyo)
[15p-P12-25]Growth and characterization of the ZnO films on PET substrates
for transparent flexible TFT applications
〇CHIHIRO WASHIZU1, Kyoma Kitahori1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1 (1.Yamanashi Univ.)
[15p-P12-26]Deterioration of flexibility in In2O3-based transparent conductive films focusing on their crystal structure
〇Kanta Kibishi1, Shinri Yamadera1, Tsubasa Kobayashi1, Yuya Yasaki1, Shinya Aikawa1 (1.Kogakuin Univ.)
[15p-P12-27]Improvement of transparent conductivity by annealing of Zr-doped ZnO thin films
〇(M1)kosuke Matsumoto1, Ichiro Takano1 (1.Grad School, Kogakuin Univ.)
[15p-P12-28]Deposition Temperature Dependence of UV Photoresponse of Amorphous GaOx UV Photodetectors deposited by Mist CVD Method
〇(M1)Iori Yamasaki1, Manami Miyazaki1, Yuma Tanaka1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.NMRC, Osaka inst. of Tech.)
[15p-P12-29]Influence of growth temperature on composition in ZnMgO thin films by mist CVD
〇Ryosuke Ohashi1, Tatsuki Okada1, Htet Su Wai1, Toshiyuki Kawaaramura1,2 (1.Kochi univ. tech., 2.Res. Inst.)
[15p-P12-30]Structural and optical characterization of the Ga-doped ZnO transparent conductive films on flexible PET substrates grown by PAMBD
〇(M2)Aolin Li1,2, Zijing Wen1,2, Yoichi Nabetani1, Tsutomu Muranaka1 (1.University of Yamanashi, 2.Hangzhou Dianzi University)
[15p-P12-31]ZnO nanoparticles-based green-LEDs using FAPbBr3 perovskite quantum dots
〇(M2)Shaaista Hasan1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane Univ., 2.S-Nanotech Co-Creation Co., Ltd.)
[15p-P12-32]Application of ZnO thin film to protective film of separator for lithium-ion battery
〇Kenji Yoshino1,2, Daiki Uto1, Akira Nagaoka1,2, Shintaro Yasui3 (1.Univ. of Miyazaki, 2.GX Research Lab. Univ. of Miyazaki, 3.Institute of Science Tokyo)
[15p-P12-33]Preferential growth of polar In2O3(100) surface by varying the sputtering pressures
〇(B)Yuichiro Ebisawa1, Ryota Kobayashi1, JinHyeok Cha2, Shinya Aikawa1 (1.Kogakuin Univ, 2.Chonnam National Univ)
[15p-P12-34]Possibility of Device Current Control by Voltage Sweep Number on PEDOT:PSS/ZnO Nanorods/GZO Heterostructure Devices
〇Tomoaki Terasako1, Masakazu Yagi2, Rajasekaran Palani3, Tetsuya Yamamoto3 (1.Grad. School Sci. & Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll., 3.Res. Inst., Kochi Univ. Technol.)
[15p-P12-35]Stable amorphous In2O3-based TFTs fabricated via room-temperature UV exposure and passivation formation
〇Shinri Yamadera1, Kanta Kibishi1, Ryota Kobayashi1, Kazuho Ishi1, Shinya Aikawa1 (1.Kogakuin Univ)
[15p-P12-36]Conduction Type of Nickel Copper Complex Hydroxide
〇Koji Abe1, Ziheng Zhang1 (1.Nagoya Inst. Tech.)
[15p-P12-37]Preparation and evaluation of MSM-type Ultraviolet sensors using Ga-Sn-O by sol-gel method
〇Yukimasa Ota1, Tokiyoshi Matsuda1, Ya Hsin Chen2, Hung Yu Ou2, Chien Yie Tsay2 (1.Kindai Univ., 2.Feng Chia Univ.)
[15p-P12-38]Electrical and optical properties of Ga-doped ZnO transparent conductive film on flexible PET substrates grown by PAMBD
〇(M2)Zijing Wen1, Aolin Li1 (1.Univ of Yamanashi)
[15p-P12-39]Oxygen cell flow conditions for the GZO thin film growth by roll-to-roll plasma-assisted molecular beam deposition
〇Kyoma Kitahori1, Chihiro Washizu1, Ritsuki Mizuno1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1 (1.Yamanashi Univ.)
[15p-P12-40]Generation of Ca-Mg-Zn-O2 Mixture Plasma by Inductively Coupled Discharge
〇Naoyuki Sato1, Tihomir Cuzovic1, Daiki Ishida1, Kyouhei Hosaka1, Kaoru Yamashita1 (1.Ibaraki Univ.)