[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-17] Analysis of photocurrent attenuation in ZnGa₂O₄ thin filmsin response to deep UV irradiation

〇RYUNOSUKE MAEDA¹, Reiya Kase¹, Yuya Oguma¹, Kazunuki Yamamoto², Satoshi Ishii¹ (1.Tokyo Denki Univ., 2.Chiba Univ.)

Keywords:

Photocurrent,Current decay

ZnGa₂O₄ (ZGO) has a wide bandgap of more than 4.8 eV and is expected to be used for optical devices targeting solar blind light (wavelength: 250~280 nm). We have fabricated the thin films from the hydrothermally synthesized ZGO nanoparticles using a binder and evaluated their electrical properties. In this study, we evaluated the current attenuation of the thin films fabricated without binder.