[15p-Y1311-1~6] Extreme environment devices

3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)

[15p-Y1311-4] 350℃ operation of a SiC complementary JFET and basic study on its performance improvement

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

SiC,junction field effect transistor,high temperature

In recent years, integrated circuits that can operate in harsh environments such as high temperatures and radiation exposure have attracted much attention. Wide-gap semiconductors are attracting attention as semiconductors that break through the material limitations of silicon, and the integrated circuit field is no exception. In particular, silicon carbide (SiC) is expected to be a suitable material for severe-environment operating integrated circuits due to its wide range of p- and n-type conductivity control by ion implantation. In this presentation, an overview of complementary circuits using SiC JFETs will be presented.