[15p-Y1311-1~6] Extreme environment devices

3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[15p-Y1311-5] Development of Ga₂O₃ Devices for Applications to Extreme Environment Electronics

〇Masataka Higashiwaki^1,2, Takafumi Kamimura², Takumi Ohtsuki², Akinori Takeyama³, Takahiro Makino³, Takeshi Ohshima³ (1.Osaka Metropolitan Univ., 2.NICT, 3.QST)

Keywords:

Gallium oxide (Ga2O3)

Gallium oxide (Ga₂O₃) is expected to be utilized for various electronics applications in extreme environments typified by under high temperatures and radiation due to its extremely large bandgap energy of 4.5 eV and physical properties resulting from strong ionic bonds. In this talk, we will report on high-frequency device characteristics and durability test results of Ga₂O₃ MOSFETs, which have been developed mainly for wireless communication and signal processing applications under high temperature and strong radiation.