[16a-K203-1~9] 6.3 Oxide electronics

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K203-3] Proton insertion and desorption in VO₂ thin films depending on the crystallinity of the cap layers

〇Souta Fuji¹, Yosuke Isoda¹, Lingling Xie¹, Takuya Majima², Ryotaro Aso³, Yuichi Shimakawa¹, Daisuke Kan¹ (1.ICR, Kyoto Univ., 2.Kyoto Univ., 3.Kyusyu Univ.)

Keywords:

vanadium dioxide,heterostructure,proton insertion and desorption

We report on electrochemical proton insertion and desorption in TiO₂/VO₂/TiO₂ heterostructures, finding that the desorption process of protons accumulated in the VO₂ layer can be controlled by modulating the crystallinity of the TiO₂ cap layer. In this presentation, we will report the details of the proton insertion and desorption processes in VO₂ thin films depending on the crystallinity of the TiO₂ cap layer, including the structural and electrical resistance changes of the heterostructure during proton insertion and desorption.