[16a-K307-1~10] 9.3 Nanoelectronics

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-K307-6] Dependence of nanogap position on gate structure during electromigration

Yuki Tsutsui^1,2, Hisashi Shima¹, Hiroyuki Akinaga¹, Hiroshi Suga², 〇Yasuhisa Naitoh¹ (1.AIST, 2.CIT)

Keywords:

electromigration,atomic migration,metal nanowire