[16a-K308-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K308-7] Analysis of the Effects of Metal Electrode Deposition on TiO_x Electron Contact /Si Interfaces Using Hard X-ray Photoelectron Spectroscopy

〇Shohei Fukaya^1,5, Kazuhiro Gotoh^1,2,3, Tappei Nishihara⁴, Hitoshi Sai⁵, Yasuyoshi Kurokawa^1,6, Noritaka Usami^1,6,7, Matsui Takuya^1,5 (1.Grad. Eng., Nagoya Univ., 2.Niigata Univ., 3.IRCNT Niigata Univ., 4.JASRI, 5.AIST, 6.InFuS Nagoya Univ., 7.IMaSS Nagoya Univ.)

Keywords:

passivation,titanium oxide,silicon photovoltaics

Recently, TiO_x deposited by ALD method has attracted attention as an electron contact layer in c-Si solar cells, and high conversion efficiency has been reported. However, the degradation of passivation performance due to Al deposition is an issue, the details of which have not been fully elucidated. In addition, a method of inserting LiF between TiO_x and Al has been proposed, but its mechanism has not been fully understood. In this study, we analyzed the chemical bonding state of TiO_x under a thick Al layer using hard X-ray photoelectron spectroscopy to investigate the factors that cause performance degradation due to Al deposition and the effect of the LiF layer.