[16a-K401-1~9] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K401-3] Optical gain measurements in InGaN red-light-emitting LED epitaxial layers

〇Itsuki Shimbo¹, Atsushi A. Yamaguchi¹, Daisuke Iida², Kazuhiro Ohkawa² (1.Kanazawa Inst. of Tech., 2.KAUST)

Keywords:

InGaN quantum well,Variable stripe length method,Optical gain

A red semiconductor laser based on InGaN quantum well (QW) as an active layer has not been realized yet. In recent years, however, an InGaN-based red-light-emitting LED with strain conpensation techniques shows relatively higher external quantum efficiency that may leads to the probability for the obsavation of amplified spontaneous emission (ASE) from a red QW. In this study, we have conducted the optical gain measurements by using the variable stripe length method to InGaN red-light-emitting LED epitaxial layers for the attemption of the ASE observation from a red QW.