[16a-K401-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K401-7] High temperature AlN growth on different misorientation off-angle SiC substrates

〇Yusuke Takayanagi¹, Koki Fujii¹, Yuto Matsubara¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ., 2.pLED, Tokushima Univ.)

Keywords:

semiconductor,III-V nitrides,MOVPE