[16a-P06-1~5] 3.10 Photonic structures and phenomena

[16a-P06-5] Absorption loss for 1.3-μm-band silicon high-Q nanocavities

〇(B)Shoei Yamasaki¹, Rikuto Ichinose¹, Ayumu Ishihara², Yuta Kanemaru¹, Wataru Takahama², Takashi Asano³, Susumu Noda³, Yasushi Takahashi² (1.Osaka Pref. Univ., 2.Osaka Met. Univ., 3.Kyoto Univ.)

Keywords:

silicon nanocavity,color center,photonic crystal

Recently, research to develop optical spin-quantum interfaces in nanocavities with high Q-values has been conducted using color centers in silicon. To achieve high performance, it is important to increase the luminous efficiency of the color centers and the radiation efficiency from the resonators. The required Q-value of the resonator is about 200,000 at the maximum, and the operating wavelength is 1.3 μm. We report an initial estimate of the absorption loss of a silicon nanocavity in this wavelength range.