Presentation Information
[16a-P08-4]Lasing Characteristics of GaInAsP MQW High-Mesa Structure Laser Diodes grown on InP/Si Substrates
〇(M2)JUNYU ZHANG1, ZHEWEN SHI1, ZHAO LIANG1, Mizuki KUROI1, Kazuhiko SHIMOMURA1 (1.Sophia Univ.)
Keywords:
semiconductor,Lasing Characteristics
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