[16p-K302-1~6] 13.8 Optical properties and light-emitting devices

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-K302-1] [The 57th Young Scientist Presentation Award Speech] Operating characteristics of a polarization-modulation detection photodiode based on a dilute nitride semiconductor

〇Daiki Mineyama¹, Tatsuya Yano¹, Kohei Etou¹, Kaito Nakama², Hidetoshi Hashimoto², Keisuke Minehisa², Junichi Takayama¹, Agus Subagyo¹, Kazuhisa Sueoka¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,near-infrared photodiode,Polarization dependence of photocurrent