[16p-K309-1~10] 3.12 Semiconductor optical devices

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-K309-5] Low-dark-current InGaAs/InP high-speed photodiode using inverted structure

〇Yuki Yamada¹, Ikue Hiraoka¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)

Keywords:

semiconductor,photodiode,reliability

High-speed photodiodes (PDs) are essential for advancing high-speed optical communication systems. We have previously reported on PDs designed for data transmission exceeding 200 Gbps. In PDs for optical communication, reducing dark current is a critical challenge from a reliability perspective. We proposed an inverted PD structure and demonstrated the lowest reported dark current characteristics. In this paper, we investigates the electric field constriction effect in the inverted structure and discusses its effect in reducing dark current.