[16p-K404-1~11] 12.4 Organic light-emitting devices and organic transistors

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K404-11] Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals

〇(PC)Hiroyuki Yamada¹, Naoto Shirahata^1,2, Tadaaki Nagao^1,3 (1.NIMS, 2.Hokkaido Univ. Chem., 3.Hokkaido Univ. Phys.)

Keywords:

silicon quantum dots,silicon quantum dots light-emitting diodes,quantum dots

In this study, the external quantum efficiency (EQE) of colloidal silicon quantum dots (SiQDs) light-emitting diode (Si-QLED) was enhanced up to 12.2% by a postproduction effect induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer was reduced to 0.95 nm from 1.54 nm by “post-electric-annealing.” The shortened distance effectively promoted charge injection into the emission layer, leading to an improvement in the EQE.