[16p-K404-1~11] 12.4 Organic light-emitting devices and organic transistors

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K404-6] Reduction of ASE threshold by suppressing concentration quenching of organic semiconductor laser materials

〇(B)Keigo Ishii^1,2, Kenichi Goushi^1,2,3, Chihaya Adachi^1,2,3 (1.Dept. Appl. Chem., Kyushu Univ., 2.OPERA, Kyushu Univ., 3.I2CNER, Kyushu Univ.)

Keywords:

organic semiconductor laser,concentration quenching,low ASE threshold

Organic semiconductor laser materials with benzoxazole (BOX) groups have a rigid structure that causes significant concentration quenching in the solid-state thin film and a significant increase in ASE threshold in neat films.To improve this situation, we designed new molecules with biphenyl groups at the center, and succeeded in improving the concentration quenching and reducing the ASE threshold in neat films.The introduction of biphenyl groups is effective as a molecular design for reducing the ASE threshold by suppressing concentration quenching.