[16p-K405-1~14] 12.5 Organic and hybrid solar cells

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K405-5] Shift current in MBE-grown high-quality CsGeI₃ thin films

〇Koma Miki¹, Masao Nakamura^2,3, Naoki Ogawa^2,3, Yoshinori Tokura^1,2,3,4, Masashi Kawasaki^1,2 (1.Facul. of Eng., Univ. of Tokyo, 2.RIKEN CEMS, 3.RIKEN BZP, 4.Tokyo College, Univ. of Tokyo)

Keywords:

shift current,perovskite halide,epitaxial thin films

The germanium iodide CsGeI₃ with perovskite structure is a ferroelectric material with large spontaneous polarization and exhibits a strong visible light response. Thus, it is suitable for studying shift current, a nonlinear photocurrent driven by quantum phases. In this presentation, we report on the successful fabrication of high-quality epitaxial thin films of CsGeI₃ with controlled growth orientation using molecular beam epitaxy, as well as the observation of shift current in the fabricated thin films.