[16p-K501-1~19] 2.2 Radiation generators, Detector development, Measurement technology

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-K501-1] Fabrication of GaN radiation detectors with low-gain avalanche diode structure

〇Hironori Okumura¹, Tetsu Iida¹, Shigeki Hirose¹, Kousuke Itabashi^2,3, Manabu Togawa^2,3, Masaya Miyahara^2,3, Tadaaki Isobe⁴, Masataka Imura⁵, Jiro Nishinaga^3,6, Keigo Urasaki¹ (1.Univ. of Tsukuba, 2.KEK, 3.QUP, 4.RIKEN, 5.NIMS, 6.AIST)

Keywords:

Pixel detector,GaN,Avalanche multiplication

Gallium nitride (GaN) is advantageous as a material for long-lifetime radiation detectors due to its high displacement damage energy, ability to operate at room temperature, and high electron-hole pair generation efficiency. We have been conducting position detection of heavy particles using vertical GaN PN diodes. For detecting proton and beta radiation, signal amplification through avalanche multiplication is essential. In this study, considering the improvement of time resolution, we fabricated a GaN pixel detector with a Low-Gain Avalanche Detector (LGAD) structure and irradiated it with alpha particles.