[16p-K501-1~19] 2.2 Radiation generators, Detector development, Measurement technology

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-K501-17] Semiconductor application by oblique incidence X-ray CT device

〇Tomomi Ogaki¹, Wenbing Yun², Sylvia JY Lewis², SH Lau² (1.Canon MJ, 2.Sigray Inc.)

Keywords:

X-ray CT,semiconductor application,oblique incidence

The FOV and spatial resolution of general-purpose orthogonal X-ray CT equipment are limited by the pixel size of the X-ray detector. For example, a typical X-ray detector has a pixel size of 2048 x 2048, a voxel size of 0.5um, and an FOV with 1mm x 1mm. Until now, applications that require large FOV, such as large electronic substrates, wafers, and secondary battery pouch cells, have required measurements at large voxel sizes with low spatial resolution. Sigray has developed a patented oblique incidence X-ray CT device with a unique mechanism and has achieved a spatial resolution of 0.5um. In this presentaion, we will introduce the new technology of oblique incidence X-ray CT equipment and show the results of semiconductor applications.