[16p-K503-1~9] KS.1 Solid State Quantum Sensor Group

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-K503-2] Vanadium-related luminescence of 4H-SiC at elevated temperature

〇Koichi Murata¹, Satoshi Asada¹, Shin-ichiro Sato² (1.CRIEPI, 2.QST)

Keywords:

quantum sensor,Silicon carbide

In the research and development of SiC quantum sensors, silicon vacancies (V_Si^-) are the primary focus of study. However, there are numerous candidates for spin defects, necessitating further material exploration. Vanadium (V) impurities in 4H-SiC crystal (V⁴⁺) are known to exhibit photoluminescence (PL) associated with intra-shell transitions at wavelengths of 1278 nm and 1334 nm. However, their luminescence properties at temperatures above room temperature remain unclear. This presentation reports the temperature dependence of luminescence properties attributed to V⁴⁺.