[16p-K503-1~9] KS.1 Solid State Quantum Sensor Group

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Highlighted Presentation

[16p-K503-3] Simultaneous temperature and magnetic field measurement using vanadium impurities and silicon vacancies in SiC

〇Shinichiro Sato¹, Koichi Murata² (1.QST, 2.CRIEPI)

Keywords:

Silicon Carbide,Vanadium,Photoluminescence

Negatively charged silicon vacancies (V_Si^-) in silicon carbide (SiC) are expected to be used as "quantum sensors" that can detect magnetic field and temperature with nanometer spatial resolution. However, the temperature measurement is still challenging due to its weaker signal. In this presentation, we propose a simple temperature measurement method based on the different temperature dependence of the photon emission intensity of V_Si^- and vanadium impurities, and also introduce the simultaneous measurement of temperature and magnetic field.