[16p-K504-1~15] 6.4 Thin films and New materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-K504-10] Analysis of growth mechanism using in-situ observation of internal stress during sputter-deposition of W films

〇Shigeki Nakagawa¹, Ryo Yokozawa¹, Daisuke Iida¹, Yota Takamura¹, Yutaka Nakamitsu², Kiyota Tetsuji² (1.Science Tokyo, 2.ULVAC)

Keywords:

internal stress,film formation,in-situ observation

It is possible to obtain information of structural changes in the early stages of film growth by in-situ observation of internal stress of W sputtered films during sputter-deposition. Observation of the internal stress of W thin films deposited at different sputtering gas pressure clarified many attractive features corresponding to the formation of the film growth. Critical film thickness corresponding to the transition point from the island structure to the continuous film formation increased. Effective internal stress appeared during the continuous film formation includes tensile stress component at high gas pressure condition.