Presentation Information
[16p-P07-2]Improvement of the Ge composition in SiGe layers on Si(111) substrate by GeH4–CVD
〇Yuki Imai1, Ito Kohei2, Katsube Ryoji2, Miyamoto Satoru2, Suzuki Shota3, Minamiyama Hideaki3, Dhamrin Marwan3,4, Usami Noritaka1,2,5 (1.InFuS, Nagoya Univ., 2.Grad. Eng., Nagoya Univ., 3.Toyo Aluminium K.K., 4.Grad. Eng., Osaka Univ., 5.IMaSS Nagoya Univ.)
Keywords:
SiGe,CVD,Solar cell
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