[16p-P07-1~8] 15.5 Group IV crystals and alloys

[16p-P07-5] Transport properties for P-doped strained SiGe/Ge with crack suppression by selective ion implantation

〇Ryota Mizoguchi¹, Masaki Nagao¹, Soichiro Takei¹, Jyun Okutani¹, Syugo Ishibashi¹, Michihiro Yamada¹, Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

Keywords:

Ge,Mobility