Presentation Information
[16p-P07-5]Transport properties for P-doped strained SiGe/Ge with crack suppression by selective ion implantation
〇Ryota Mizoguchi1, Masaki Nagao1, Soichiro Takei1, Jyun Okutani1, Syugo Ishibashi1, Michihiro Yamada1, Kohei Hamaya2,3, Kentarou Sawano1 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)
Keywords:
Ge,Mobility
Comment
To browse or post comments, you must log in.Log in