[16p-P09-1~15] 6.2 Carbon-based thin films

[16p-P09-2] Experimental study of boron doped single-crystal diamond on the effects of the substrate temperatrue in hot filament chemical vapor deposition.

〇Koki Kawasaki¹, Takehiro Shimaoka¹, Keisuke Shigemori², Hideaki Yamada¹ (1.AIST, 2.ILE)

Keywords:

Boron doped diamond,Hot filament chemical vapor deposition,Substrate temperature

Single-crystal diamond growth by hot filament chemical vapor deposition (HFCVD) has attracted much attention recently, however, there was no work that gave sufficient insights of the effects of the substrate temperature. This study explores the effects of substrate temperature of B doped single-crystal diamond using HFCVD. The substrate temperature was varied by controlling the thermal insulation of the substrate, and the temperature was estimated by measuring a dummy sample using a thermocouple in the preliminary experiments. Then, actual deposition experiments were performed in the same experimental setup. The growth rate, resistivity, surface morphology, and elemental concentrations were characterized. As a result, it was found that the growth and film properties clearly depended on the substrate temperature, indicating that an appropriate choice of the substrate temperature is crucial to achieve desired diamond properties and reproducibility.