[16p-P10-1~10] 6.5 Surface Physics, Vacuum

[16p-P10-6] Quantum-well states in ultrathin In films on Si(111)

〇Shinichiro Hatta¹, Mahiro Yamashita¹, Hiroshi Okuyama¹ (1.Kyoto Univ.)

Keywords:

quantum well,ultrathin film,ARPES

We have investigated the electronic structure of ultrathin In films by angle-resolved photoelectron spectroscopy. Quantum-well states (QWSs) of the bulk In sp band and Si heavy hole (HH) band were simultaneously observed for films with thicknesses thicker than six atomic layers. The thickness dependence of the In QWSs was well reproduced by the phase-shift quantization (PSQ) rule. Likewise, that of the Si HH band QWSs was explained by assuming a wave function that crosses the In/Si interface.