Presentation Information
[16p-P11-1]Development of low-temperature scanning tunneling potentiometry (II)
〇Masayuki Hamada1, Masahiro Haze1, Junya Okazaki1, Sato Yudai2, Yukio Hasegawa1 (1.ISSP, the Univ. of Tokyo, 2.Leiden Institute of Physics, Leiden Univ.)
Keywords:
scanning tunneling potentiometry,surface-state conductivity,surface electrical conductivity
Scanning tunneling potentiometry (STP) enables us to image the topography and electrochemical potential distributions simultaneously at an atomic-scale spatial resolution and micro-volt-level potential sensitivity on the surface under a lateral current flowing parallel to the sample surface.
We have developed a low-temperature (LT) STP that can function in LT, where quantum phenomena are expected to emerge in the surface electrical conductivity. We successfully performed STP measurements on a ~1 monolayer Pb reconstructed structure formed on a Si(111) substrate at LT.
We have developed a low-temperature (LT) STP that can function in LT, where quantum phenomena are expected to emerge in the surface electrical conductivity. We successfully performed STP measurements on a ~1 monolayer Pb reconstructed structure formed on a Si(111) substrate at LT.
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