[16p-P12-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-P12-1] Effect of Ag diffusion source film thickness on photosensitivity of Mg2Si-PD

〇Yuki Iino¹, Hideto Takei¹, Kaito Ojima¹, Shunya Sakane¹, Hruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,SWIR,Image Sensors

We developed shortwave infrared (SWIR) range photodiodes (PDs) using inexpensive and abundant Mg2Si and evaluated the effect of residual Ag after thermal diffusion by controlling Ag film thickness (5 nm, 10 nm, and 20 nm). The Mg2Si-PD formed by thermal diffusion showed clear rectification at all film thicknesses, confirming proper formation of pn junctions. In addition, spectral sensitivity measurements also showed photosensitivity in all samples. Detailed electrical and optical characterization will be reported on the same day.