[16p-P12-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-P12-5] Growth and Evaluation of InSb Thin Films on Si Substrates by Sputtering Deposition Method

〇Aito Koganezawa¹, Hiroto Kubota¹, Akito Ayukawa¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

InSb,MWIR

InSb is a semiconductor with high electron mobility and optical absorption coefficient, making it a promising material for infrared photodetectors. In this study, InSb thin films were deposited on Si substrates using a sputtering method, and their crystallinity was evaluated. The film thickness increased proportionally with deposition time, and crystallization progressed with heat treatment above 300°C. High-crystallinity polycrystalline films were obtained at heat treatment temperatures above 400°C.