[16p-P14-1~6] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[16p-P14-6] Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction

〇Takuya Kawazu¹ (1.NIMS)

Keywords:

Schottky photocurrent

We demonstrate that the gate voltage V_g tunes the Schottky photocurrent I_SG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm-laser that illuminates the entire Schottky gate region at 280μW/mm². Light B is a 670-nm-laser that locally illuminates the ungated region at 0.4μW. When V_g = 0V, Light B doubles I_SG for Light A. At V_g = 87mV, I_SG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When V_g = 165mV, I_SG is induced only for the illumination of Light A alone, like A∩B.