[16p-Y1311-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-5] Application of α-Ga₂O₃-based Schottky barrier diode to rectenna

〇Takeru Wakamatsu¹, Shizuo Fujita¹, Kentaro Kaneko^1,2, Yasuo Ohno³, Tomomi Hiraoka³, Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Ritsumeikan Univ., 3.Laser Systems Inc.)

Keywords:

gallium oxide,rectenna,Schottky barrier diode