The 72nd JSAP Spring Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-Y1311-1~15]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 16, 2025 1:00 PM - 5:15 PM JST
Sun. Mar 16, 2025 4:00 AM - 8:15 AM UTC
Y1311 (Bldg. 13)
Takayoshi Oshima(NIMS), Kazuyuki Uno(Wakayama Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-1]Plasma-Assisted Molecular Beam Epitaxial Growth of High-Density Nitrogen-Doped Ga2O3Thin Films by Simultaneously Supplying Oxygen and Nitrogen Radicals (1)

〇(M1)Jin Inajima1, Kura Nakaoka1, Shoki Taniguchi1, Tomoki Uehara1, Kohki Tsujimoto1, Yusuke Teramura1, Satoko Honda1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-2]Plasma-Assisted Molecular Beam Epitaxial Growth of High-Density Nitrogen-Doped Ga2O3 Thin Films by Simultaneously Supplying Oxygen and Nitrogen Radicals (2)

〇(B)Kohki Tsujimoto1, Kura Nakaoka1, Shoki Taniguchi1, Jin Inajima1, Tomoki Uehara1, Yusuke Teramura1, Satoko Honda1, YongGu Shim1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-3]Electrical Properties of Nitrogen-Doped Ga2O3 Schottky Barrier Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

〇(M1)Tomoki Uehara1, Shoki Taniguchi1, Kohki Tsujimoto1, Kura Nakaoka1, Jin Inajima1, Yusuke Teramura1, Satoko Honda1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-4]Growth of nitrogen-doped β-Ga2O3 homoepitaxial layers by HVPE

〇Yu Kono1, Takatoshi Kikawa1, Kentaro Kakuta1, Yoshinao Kumagai1,2 (1.Tokyo Univ. of Agric. and Technol., 2.TUAT FLOuRISH)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-5]Application of α-Ga2O3-based Schottky barrier diode to rectenna

〇Takeru Wakamatsu1, Shizuo Fujita1, Kentaro Kaneko1,2, Yasuo Ohno3, Tomomi Hiraoka3, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ., 3.Laser Systems Inc.)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-6]Formation of high-quality SiO2/β–Ga2O3 MOS structures by post-deposition annealing

〇Kensei Maeda1, Takuma Kobayashi1, Masahiro Hara1, Mikito Nozaki1, Heiji Watanabe1 (1.Osaka Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-7]Mist CVD Growth and Characterization of α-Ga2O3 Films on α-Cr2O3 Templates

〇(M2)Kotono Yamada1, Ryuma Iida1, Shiyu Xiao2, Kazuto Murakami2, Takeyoshi Onuma1, Tohru Honda1, Morimichi Watanabe2, Tomohiro Yamaguchi1 (1.Kogakuin Univ., 2.NGK INSULATORS, LTD.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-8]Lattice matching of (AlxScyGa1−x−y)2O3 alloy grown on β-Ga2O3 substrate

〇Kazuki koreishi1, Takuto Soma1, Akira Ohtomo1 (1.Science Tokyo, Dept. Chem. Sci. Eng.)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-9]Effects of High-Temperature Annealing on Electrical Properties of Si-Doped Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOCVD

〇(M1)Jun Morihara1, Mao Bando1, Junya Yoshinaga2,3, Yoshinao Kumagai2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORPORATION, 4.NICT)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-10]Mist CVD Growth of Rocksalt-structured MgZnO/MgO Quantum Wells and Observation of Quantum Effects by Thinning the Well Layer

〇Hiroyuki Aichi1, Kotaro Ogawa1, Toshiki Mitomi1, Kazaki Takahashi1, Kyosuke Tanaka1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-11]Effect of slow cooling on rs-MgZnO thin films grown on sapphire substrates

〇Kosuke Kimura1, Kohei Shima2, Kouichi Matsuo3, Kouji Uchida3, Atsushi Oono3, Shigefusa Chichibu2, Kentaro Kaneko4 (1.Ritsumeikan Univ., 2.IMRAM-Tohoku Univ., 3.IWASAKI ELECTRIC Co., Ltd., 4.RISA)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-12]Growth of water-insoluble rutile GeO2 thin films enabled by graded GexSn1-xO2 buffer layers

〇Kazuki Shimazoe1, Ichiro Seike1, Kazutaka Kanegae1, Hiroyuki Nishinaka1 (1.Kyoto Inst. Tech.)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-13]Direct observation of the density of in-gap States of In2O3:H and the origin of instability in thin film transistor

〇(PC)Ryotaro Nakazawa1, Yusaku Magari2, Hiromichi Ohta2, Satoshi Kera1 (1.IMS, 2.RIES - Hokkaido Univ.)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-14]Temperature dependence of defect distribution in amorphous In-Ga-Zn-O thin film transistors using fast inverse analysis of device simulation

〇(D)Atsushi Shimizu1, Masatoshi Kimura1, Keisuke Ide1, Takayoshi Katase1, Hidenori Hiramatsu1, Hideo Hosono1, Toshio Kamiya1 (1.Science Tokyo)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-15]Effects of electrode material and channel Ga concentration on contact resistance in polycrystalline Ga-doped In2O3 field-effect transistors

〇Hikaru Hoshikawa1, Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST)
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