[17a-K302-1~6] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-K302-2] Strain effects on exciton energies in InGaAs/GaAs multiple quantum wells

〇Osamu Kojima¹, Yasuki Nakajima¹, Tomoya Inoue², Takashi Kita² (1.Chiba Inst. Tech., 2.Kobe Univ.)

Keywords:

InGaAs/GaAs quantum well,exciton,strain

Strain effecs are one of the most effective perturbation, however, it is diffcult to understand the relationship between the variation in the properties and the strain. Therefore, in this study, we report the effects on the exciton energies in InGaAs/GaAs multiple quantum wells fabricated by the various In concentration. In concentration was controlled from 5 to 15%. The heavy-hole exciton energies change with the In concentration, however, that is not explained by considering the variation of the In concentration and quantum confinement effects. This originates from the strain effect.