[17a-K302-1~6] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-K302-3] Terahertz Field Sensors Using Electro-Optic Effect in a Semiconductor Microcavity: Theoretical Study on the Substrate Orientation Dependence

〇Takahiro Kitada¹, Yukihiro Harada², Toshiyuki Kaizu³, Yasuo Minami⁴, Osamu Kojima⁵, Takashi Kita², Osamu Wada⁶ (1.NIT of Matsue, 2.Grad. Sch. of Eng., Kobe Univ., 3.UEC, 4.Nihon Univ., 5.Chiba Inst. Tech., 6.Kobe Univ.)

Keywords:

optical microcavity,electro-optic effect,terahertz sensing

We have proposed terahertz (THz) field sensors using electro-optic (EO) effect in a GaAs-based multilayer microcavity. In the sensor, the infrared probe light is used for the detection of the phase-shift signal due to birefringence arising from EO effect induced by the THz field irradiation. Long photon lifetime in the optical microcavity enables us to detect the clear phase-shift signal even for the vertical incidence geometry. In this study, the theoretical investigations were conducted on the substrate orientation and THz field direction dependence of EO effect in an optical microcavity with the zincblende crystal structure.