[17a-K305-1~9] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[17a-K305-3] Short-Wave Infrared GeSn Waveguide Photodetector on Silicon

Ting-Yu Chen¹, Soumava Ghosh¹, Cheng-Ting Kuo¹, Yue-Tong Jheng¹, 〇Guo-En Chang¹ (1.National Chung Cheng Univ.)

Keywords:

GeSn alloys,Waveguide Photodetectors,Short-wave Infrared

Group-IV GeSn alloys have emerged as a promising candidate for silicon photonics. Introducing Sn into Ge to form GeSn alloys can lower the bandgap energy, thereby shifting the absorption coefficient spectrum from ~1500 nm toward longer wavelength to enable efficient photodetection in the short-wave infrared (SWIR) region, typically defined in the spectral range of 1000-2500 nm. Here, we report on GeSn waveguide photodetectors (WGPDs) can work in the entire SWIR region for silicon photonics applications.